This is a novel epitaxial junction technology that is scalable to high volume in a short timescale. Presently manufactured on 150mm dia. wafers but already 200mm dia. wafers are being developed for manufacturing release in 2026, all processed at Semefab’s wafer fab in Glenrothes, Scotland, UK.

The process technology has the additional benefit of improved current uniformity giving competitive repetitive surge current capability without the compromise of increased reverse bias leakage using JBS or MPS technology.

The target market is to replace all Fast Recovery diode products at these voltage ranges with higher performance, nearly zero reverse recovery and higher operating temperature SiC Schottky diodes.

With the cost of SiC products reducing quickly, it is already the case that the extra cost over silicon diodes is recovered in electricity energy saving alone within as early as 6 months operation.

Semefab offers 650v products in TO220 2 lead, and TO247 both 2 and 3 leads plastic packaging.

1200v and 1700v are offered in 2 or 3 leads TO247 plastic packages. High rel hermetic packaging to follow in 2025.

Semefab plans to continuously enhance its portfolio within the power market, in addition to Schottky diodes, IGBTs are currently in development. Co-packaged devices will be available from December 2024.

For more information and to request samples and data sheets please contact our Sales & Marketing Manager, Roisin Smith on Roisin.Smith@Semefab.com