Semefab enters Power Semis market

Semefab’s CEO, Graeme Shaw, excitedly announces the release of our range of SiC Schottky Barrier Diodes designed for power applications, which require ultra-high performance, low loss, and high efficiency.

Semefab is qualifying its range of Silicon Carbide Schottky Barrier diodes in 650v, 1200v, and 1700v products in discrete packaging or bare die for production release in July 2024.

This is a novel epitaxial junction technology that is scalable to high volume in a short timescale. Presently manufactured on 150mm dia. wafers but already 200mm dia. wafers are being developed for manufacturing release in 2026, all processed at Semefab’s wafer fab in Glenrothes, Scotland, UK.

The process technology has the additional benefit of improved current uniformity giving competitive repetitive surge current capability without the compromise of increased reverse bias leakage using JBS or MPS technology.

The target market is to replace all Fast Recovery diode products at these voltage ranges with higher performance, nearly zero reverse recovery and higher operating temperature SiC Schottky diodes.

With the cost of SiC products reducing quickly, it is already the case that the extra cost over silicon diodes is recovered in electricity energy saving alone within as early as 6 months operation.

Semefab offers 650v products in TO220 2 lead, and TO247 both 2 and 3 leads plastic packaging.

1200v and 1700v are offered in 2 or 3 leads TO247 plastic packages. High rel hermetic packaging to follow in 2025.

Semefab plans to continuously enhance its portfolio within the power market, in addition to Schottky diodes, IGBTs are currently in development. Co-packaged devices will be available from December 2024.

For more information and to request samples and data sheets please contact our Sales & Marketing Manager, Roisin Smith on

Key Features:Key Applications:
Zero forward and reverse recoveryConsumer and industrial power supplies
Temperature independent switch performanceDC-DC converter
High IFRM capabilityHigh frequency AC-DC converter
Low leakage currentTraction inverter
Outstanding figure of merit (Qc x Vf)On board charger
Thermal stability up to 175C junction temperatureBattery charging

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