A diverse foundry process portfolio
Semefab is an experienced silicon wafer foundry and as such we are accustomed to developing, optimising and inducting customer-specific solutions in a timely and cost-effective manner.
With an extensive process portfolio Semefab specialises in MEMS, CMOS, Opto-CMOS, Linear IC, BiCMOS, ASIC and
Discrete Semiconductor device technologies such as JFET, PIN diode, RF MOSFET, FRD, Bipolar transistor.
Integrated CMOS & MEMS fabrication can also be supported.
Fab 2 100mm & 150mm wafers, MEMS
Diffusion
LPCVD polysilicon
Oxidation & anneal to 1250C
Alloy N2/H2 450C
PVD/Metallisation
PECVD nitride, oxide, oxynitride with stress control – Novellus Concept 1
Sputter, 3 target sputtering, Au,TiW, Ti, CuN, Al – MRC
Evaporation, 4 crucible ebeam, Au, Ag, Ti, Ni, Cr, Pd, Ta, Pt – Balzers
Photolithography
Contact/Double sided contact/proximity aligners – OAI & EVG
Stepper 1.0 um – ASM 4500
Bake/Coat/Bake resist & polyimide coat – SVG
Develop, TMAH based – SVG
Wet Etch
BOE Oxide etches, wet metal etch
KOH silicon etch
Dry Etch
Plasma poly & nitride etch – LAM 4420
Plasma oxide etch – LAM 4520
XeF2 vapour polysilicon & silicon etch – MEMSSTAR
Resist strip
Solvent strip – EKC
Oxygen plasma resist strip – Matrix
Lift off using NMP1165 ( Definition of metals eg Au, Ni, Ag etc )
Wafer Bonding
Anodic/fusion/eutectic wafer bonding – EVG 520IS
Metrology
CMT 4 pt probe-sheet resistance, step height measurement – Dektak
EDX capability – SEM
CD measurement – Nexiv
Fab 3 150mm wafers, MOS/BiPolar
Diffusion
Pre diffusion clean FSI mercury automated RCA clean
High temp oxidation & anneal SiC to 1280C
Standard oxidation & anneal quartz to 1100C
LPCVD nitride deposition
LPCVD polysilicon deposition 500C & 620C
LPCVD TEOS Oxide 700C
Boron deposition BBr3 5-100 ohms/square
Phos deposition POCl3 5-50 ohms /square
Boron drive
Phos drive
Alloy N2/H2 450C
PVD/Metallisation
Sputter Al/1%Si, Al/1%Cu – Varian 3290
PECVD nitride, oxide, oxynitride with stress control – Novellus Concept 1
Photolithography
HMDS vapour prime
Spin Coat Bake/Resist Coat/Bake, Positive resist 1.0-4.0um – SVG track
Develop/Bake TMAH based – SVG track
Projection alignment – Perkin Elmer
Stepper 0.7um – ASM 5500
Double sided alignment – KS
Wet Etch
BOE Oxide etches, wet metal etch
Dry Etch
Plasma poly & nitride etch – LAM 4420
Plasma oxide etch – LAM 4520
Plasma metal etch – LAM 9600
Deep reactive ion etching of silicon – STS Pegasus
Resist Strip
Solvent resist strip – Nanostrip and EKC
Oxygen plasma resist strip – Tegal 915
Ion Implant
Low current B11, P31, As75 26keV to 180 keV – Varian 350D
Hiigh current , B11, P31, As75 40keV to 180 keV – Varian XP180
Metrology
CD measurement – Nanoline
CD SEM – Hitachi
Layer thickness measurement – Nanospec
Particle measurement – Tencor 7600